Product Summary

The BSS84 is a P-Channel enhancement mode field effect transistor. It is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. The BSS84 can be used, with a minimum of effort, in most applications requiring up to 0.13A DC and can deliver current up to 0.52A. The BSS84 is particularly suited to low voltage applications requiring a low current high side switch.

Parametrics

BSS84 absolute maximum ratings: (1)VDSS Drain-Source Voltage: -50V; (2)VGSS Gate-Source Voltage: ±20V; (3)ID Drain Current – Continuous: -0.13A; Pulsed: -0.52A; (4)Maximum Power Dissipation, PD: 0.36W; Derate Above 25℃: 2.9mW/℃; (5)TJ, TSTG, Operating and Storage Junction Temperature Range: -55 to +150℃; (6)TL, Maximum Lead Temperature: 300℃.

Features

BSS84 features: (1)-0.13A, -50V. RDS(ON) = 10Ω @ VGS = -5 V; (2)Voltage controlled p-channel small signal switch; (3)High density cell design for low RDS(ON); (4)High saturation current.

Diagrams

BSS84 circuit

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BSS84
BSS84
Fairchild Semiconductor
MOSFET SOT-23 P-CH ENHANCE
Data Sheet
0-1: $0.17
1-25: $0.15
25-100: $0.09
100-250: $0.05
BSS84(Z)
BSS84(Z)
Other

Data Sheet
Negotiable 
BSS84,215
BSS84,215
NXP Semiconductors
MOSFET P-CH DMOS 50V 130MA
Data Sheet
0-1: $0.04
1-25: $0.03
25-100: $0.03
100-250: $0.03
BSS84_D87Z
BSS84_D87Z
Fairchild Semiconductor
MOSFET P-Ch Spec Enhance Mode Field Effect
Data Sheet
Negotiable 
BSS84_Q
BSS84_Q
Fairchild Semiconductor
MOSFET P-Channel Enhance
Data Sheet
Negotiable 
BSS8402DW
BSS8402DW
Other

Data Sheet
Negotiable 
BSS8402DW-7
BSS8402DW-7
Diodes Inc.
MOSFET 60 / -50V 200mW
Data Sheet
Negotiable 
BSS8402DW-7-F
BSS8402DW-7-F
Diodes Inc.
MOSFET 60 / -50V 200mW
Data Sheet
0-1: $0.33
1-10: $0.26
10-100: $0.17
100-500: $0.15