BS170

N-Channel, enhancement mode field effect transistor, 500mA, 60 V, High density cell design, High saturation current capability

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Price:: US $0.10~0.11 / piece [Get Latest Price]

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	US $0.10~0.11

PartNumber:: BS170

Brand:: Fairchild Semiconductor - Fairchild | Pack: TO | D/C: 10+

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Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2011-10-31

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Part Number:BS170
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Product Summary

The BS170 is a N-Channel enhancement mode field effect transistor. It is produced using Fairchild’s proprietary, high cell density, DMOS technology. The BS170 has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. The BS170 can be used in most applications requiring up to 500mA DC. The BS170 is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

Parametrics

BS170 absolute maximum ratings: (1)VDSS, Drain-Source Voltage: 60 V; (2)VDGR, Drain-Gate Voltage (RGS ≤ 1MΩ): 60V; (3)VGSS, Gate-Source Voltage: ± 20 V; (4)ID, Drain Current, Continuou: 500mA; Pulsed: 1200mA; (5)TJ, TSTG, Operating and Storage Temperature Range: - 55 to 150℃; (6)TL, Maximum Lead Temperature for Soldering Purposes, 1/16 inch from Case for 10 Seconds: 300℃.

Features

BS170 features: (1)High density cell design for low RDS(ON); (2)Voltage controlled small signal switch; (3)Rugged and reliable; (4)High saturation current capability.